Rainbow-electronics DS1250Y_AB Manuel d'utilisateur

Copyright 1995 by Dallas Semiconductor Corporation.All Rights Reserved. For important information regardingpatents and other intellectual property r

DS1250Y/AB041497 10/11DS1250Y/AB NONVOLATILE SRAM, 34–PIN POWERCAP MODULE WITH POWERCAPPKGDIMINCHESMIN NOM MAXA 0.920 0.925 0.930B 0.955 0.960 0.965C

DS1250Y/AB041497 11/11RECOMMENDED POWERCAP MODULE LAND PATTERNPKGDIMINCHESMIN NOM MAXA – 1.050 –B – 0.826 –C – 0.050 –D – 0.030 –E – 0.112 –ADBCE16 PL

DS1250Y/AB041497 2/11DESCRIPTIONThe DS1250 4096K Nonvolatile SRAMs are4,194,304–bit, fully static, nonvolatile SRAMs orga-nized as 524,288 words by 8

DS1250Y/AB041497 3/11ABSOLUTE MAXIMUM RATINGS*Voltage on Any Pin Relative to Ground –0.3V to +7.0VOperating Temperature 0°C to 70°C, –40°C to +85°C fo

DS1250Y/AB041497 4/11(VCC=5V ± 5% for DS1250AB)AC ELECTRICAL CHARACTERISTICS (tA: See Note 10) (VCC=5V ± 10% for DS1250Y)PARAMETER SYMBOLDS1250AB–70DS

DS1250Y/AB041497 5/11READ CYCLEtRCtACCVIHVILVIHVILVIHVILtOHVIHtODtODVIHVOHVOLVOHVOLtCOEtCOEOUTPUTDATA VALIDDOUTOEADDRESSESVIHVIHtOEVILVILCE tCOSEE NOT

VCC3.2VtFtPDtRtRECDATA RETENTIONTIMEtDRLEAKAGE CURRENTIL SUPPLIED FROMLITHIUM CELLCEVTPSEE NOTE 11DS1250Y/AB041497 6/11WRITE CYCLE 2tWCVILVIHVILVIHVIL

DS1250Y/AB041497 7/11POWER–DOWN/POWER–UP TIMING (tA: See Note 10)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESCE, WE at VIH beforePower–DowntPD0 µs 11VCC S

A1DIM MIN MAXA IN.MMB IN.MMC IN.MMD IN.MME IN.MMF IN.MMG IN.MMH IN.MMJ IN.MMK IN.MM1.68042.671.70043.180.72018.290.74018.800.3559.020.3759.520.0802.03

DS1250Y/AB041497 9/11DS1250Y/AB NONVOLATILE SRAM, 34–PIN POWERCAP MODULEPKGDIMINCHESMIN NOM MAXA 0.920 0.925 0.930B 0.980 0.985 0.990C – – 0.080D 0.05