
DS1315
041697 10/22
AC ELECTRICAL OPERATING CHARACTERISTICS
ROM/RAM
= V
CCO
(0°C to 70°C; V
CC
= 5.0 ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Read Cycle Time t
RC
65 ns
CEI Access Time t
CO
55 ns
OE Access Time t
OE
55 ns
CEI to Output Low Z t
COE
5 ns
OE to Output Low Z t
OEE
5 ns
CEI to Output High Z t
OD
25 ns
OE to Output High Z t
ODO
25 ns
Address Setup Time t
AS
5 ns
Address Hold Time t
AH
5 ns
Read Recovery t
RR
10 ns
Write Cycle t
WC
65 ns
CEI Pulse Width t
CW
55 ns
OE Pulse Width t
OW
55 ns
Write Recovery t
WR
10 ns 4
Data Setup t
DS
30 ns 5
Data Hold Time t
DH
0 ns 5
RST Pulse Width t
RST
65 ns
CEI Propagation Delay t
PD
5 ns 2, 3, 11
CEI High to Power–Fail t
PF
0 ns 11
3.3 VOLT DEVICE OPERATING RANGE CHARACTERISTICS
DC OPERATING ELECTRICAL CHARACTERISTICS (0°C to 70°C; V
CC
= 3.3 ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Average V
CC
Power Supply
Current
I
CC1
3 mA 6
Average V
CC
Power Supply
Current, (V
CCO
= V
CCI
–0.3)
I
CC01
100 mA 7
TTL Standby Current (CEI = V
IH
) I
CC2
2 mA 6
CMOS Standby Current
(CEI
= V
CCI
–0.2)
I
CC3
1 mA 6
Input Leakage Current (any input) I
IL
–1 +1 µA
Output Leakage Current (any
output)
I
LO
–1 +1 µA
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