
MAX113/MAX117
+3V, 400ksps, 4/8-Channel,
8-Bit ADCs with 1µA Power-Down
4 _______________________________________________________________________________________
TIMING CHARACTERISTICS
(V
DD
= +3V, T
A
= +25°C, unless otherwise noted.) (Note 4)
Note 4: Input control signals are specified with t
r
= t
f
= 5ns, 10% to 90% of 3V, and timed from a voltage level of 1.3V. Timing
delays get shorter at higher supply voltages. See the Conversion Time vs. Supply Voltage graph in the
Typical Operating
Characteristics
to extrapolate timing delays at other power-supply voltages.
Note 5: See Figure 1 for load circuit. Parameter defined as the time required for the output to cross 0.66V or 2.0V.
Note 6: See Figure 2 for load circuit. Parameter defined as the time required for the data lines to change 0.5V.
Note 7: Also defined as the Minimum Address-Valid to Convert-Start Time.
0.8 100.66 10
WR Pulse Width
t
WR
0.6 10 µs
700
Minimum
Acquisition Time
t
ACQ
450 ns(Note 7) 600
MAX117M
MIN MAXMIN TYP MAX
PARAMETER SYMBOL
MIN MAX
UNITSCONDITIONS MAX117C/E
T
A
= +25°C
ALL GRADES
T
A
= T
MIN
to T
MAX
250
Data Access Time
(WR-RD Mode)
t
ACC2
180 ns
t
RD
> t
INTL
, C
L
= 100pF
(Note 5)
220
1.0
600
150
600
400
1.8
70
250
240
Data Access Time
After INT
t
ID
Delay Between WR
and RD Pulses
t
RD
0.8 µs
RD Pulse Width
(WR-RD Mode)
t
READ1
400 ns
100 ns
Multiplexer Address
Hold Time
Data Access Time
(WR-RD Mode)
t
ACC1
400 ns
RD to INT Delay
t
RI
300 ns
WR to INT Delay
t
INTL
0.7 1.45 µs
t
AH
50 ns
Pipelined mode, C
L
= 100pF
RD Pulse Width
(WR-RD Mode)
t
READ2
180 ns
WR to INT Delay
t
IHWR
180 ns
0.9
500
130
t
RD
> t
INTL
, determined by
t
ACC2
t
RD
< t
INTL
, determined by
t
ACC1
500
t
RD
< t
INTL
, C
L
= 100pF
(Note 5)
340
C
L
= 50pF
Pipelined mode, C
L
= 50pF
1.6
60
220
200
150
0
0
140
t
CRD
+
150
180
130
0
0
120
t
CRD
+
130
170
Data Hold Time t
DH
100 ns
CS to RD, WR
Setup Time
t
CSS
0 ns
CS to RD, WR
Hold Time
t
CSH
0 ns
CS to RDY Delay
t
RDY
100 ns
(Note 6)
Data Access Time
(RD Mode)
t
ACC0
t
CRD
+
100
ns
RD to INT Delay
(RD Mode)
t
INTH
100 160 ns
C
L
= 100pF (Note 5)
C
L
= 50pF,
R
L
= 5.1kΩ to V
DD
C
L
= 50pF
2.42.06
Conversion Time
(WR-RD Mode)
t
CWR
1.8 µs
t
RD
< t
INTL
, C
L
= 100pF
(Note 5)
1.41.2
Power-Up Time t
UP
0.9 µs
2.62.4
Conversion Time
(RD Mode)
t
CRD
2.0 µs
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