
295
ATmega128(L)
2467B–09/01
least t
WD_EEPROM
before programming the next byte. See Table 129 for t
WD_EEPROM
value.
Figure 144. .Serial Programming Waveforms
Table 129. Minimum Wait Delay before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FLASH
4.5 ms
t
WD_EEPROM
9.0 ms
t
WD_ERASE
9.0 ms
MSB
MSB
LSB
LSB
SERIAL CLOCK INPUT
(SCK)
SERIAL DATA INPUT
(MOSI)
(MISO)
SAMPLE
SERIAL DATA OUTPUT
Table 130. Serial Programming Instruction Set
Instruction
Instruction Format
OperationByte 1 Byte 2 Byte 3 Byte4
Programming Enable 1010 1100 0101 0011 xxxx xxxx xxxx xxxx Enable Serial Programming after RESET goes
low.
Chip Erase 1010 1100 100x xxxx xxxx xxxx xxxx xxxx Chip Erase EEPROM and Flash.
Read Program
Memory
0010 H000 aaaa aaaa bbbb bbbb oooo oooo Read H (high or low) data o from Program
memory at word address a:b.
Load Program
Memory Page
0100 H000 xxxx xxxx xbbb bbbb iiii iiii Write H (high or low) data i to Program
Memory page at word address b. Data low
byte must be loaded before data high byte is
applied within the same address.
Write Program
Memory Page
0100 1100 aaaa aaaa bxxx xxxx xxxx xxxx
Write Program Memory Page at address a:b.
Read EEPROM
Memory
1010 0000 xxxx aaaa bbbb bbbb oooo oooo Read data o from EEPROM memory at
address a:b.
Write EEPROM
Memory
1100 0000 xxxx aaaa bbbb bbbb iiii iiii Write data i to EEPROM memory at address
a:b.
Read Lock Bits 0101 1000 0000 0000 xxxx xxxx xxoo oooo Read Lock bits. “0” = programmed, “1” =
unprogrammed. See
Table 116 on page
279
for details.
Write Lock Bits 1010 1100 111x xxxx xxxx xxxx 11ii iiii Write Lock bits. Set bits = “0” to program Lock
bits. See
Table 116 on page 279 for details.
Read Signature Byte 0011 0000 xxxx xxxx xxxx xxbb oooo oooo Read Signature Byte o at address b.
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